ELECTRICAL MEASUREMENT OF THE FORMATION OF THE PLATINUM-RICH METAL SILICIDES BY METAL-SILICON REACTION

被引：5
|
作者：
GAS, P [1 ]
TARDY, J [1 ]
LEGOUES, F [1 ]
DHEURLE, FM [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 17期
关键词：
D O I：
10.1063/1.97940
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1135 / 1137
页数：3
相关论文
共 50 条
  • [21] 2-STAGE PROCESS FOR SILICIDE FORMATION AT METAL-SILICON INTERFACES
    NEMANICH, RJ
    STAFFORD, BL
    JACKSON, WB
    THOMPSON, MJ
    ABELSON, JR
    SIGMON, TW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 588 - 588
  • [22] ION MIGRATION IN METAL-SILICON DIOXIDE SILICON STRUCTURES
    BLAGODAROV, AN
    TARNASHINSKII, AA
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1976, (01): : 105 - 111
  • [23] INTERFACIAL ION MIXING IN METAL-SILICON BILAYERS
    EKTESSABI, AM
    HESHMATI, AH
    KHOSRAVI, R
    JOURNAL DE PHYSIQUE, 1990, 51 (14): : C4281 - C4284
  • [24] Metallurgical microstructure control in metal-silicon reactions
    TU KingNing
    TANG Wei
    Science China(Technological Sciences), 2014, (03) : 505 - 519
  • [25] EVIDENCE FOR A DIMER RECONSTRUCTION AT A METAL-SILICON INTERFACE
    LORETTO, D
    GIBSON, JM
    YALISOVE, SM
    PHYSICAL REVIEW LETTERS, 1989, 63 (03) : 298 - 301
  • [26] ON METAL-SILICON CONTACTS FABRICATED BY CHEMICAL METHOD
    GHOSH, K
    DATTA, AK
    CHOWDHURY, NKD
    DAW, AN
    INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1982, 20 (04) : 308 - 310
  • [27] Characteristics of metal-silicon carbide tunnel contact
    Aroutiounian, VM
    Buniatyan, VV
    Soukiassian, PG
    Buniatyan, VV
    JOURNAL DE PHYSIQUE IV, 2006, 132 : 137 - 139
  • [28] CONTACT PROPERTIES OF METAL-SILICON SCHOTTKY BARRIERS
    HIROSE, M
    ALTAF, N
    ARIZUMI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (03) : 260 - +
  • [29] INTERFACE STATES AND NATURE OF METAL-SILICON CONTACTS
    VARMA, RR
    MCKINLEY, A
    WILLIAMS, RH
    HIGGINBOTHAM, IG
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (13) : L171 - L174
  • [30] RECTIFICATION PROCESS AT METAL-SILICON SURFACE BARRIERS
    WALTER, FJ
    BOSHART, RR
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1966, NS13 (03) : 189 - +
12345