STEP-EDGE AND STACKED-HETEROSTRUCTURE HIGH-T-C JOSEPHSON-JUNCTIONS FOR VOLTAGE-STANDARD ARRAYS

被引：12
|
作者：
BENZ, SP [1 ]
REINTSEMA, CD [1 ]
ONO, RH [1 ]
ECKSTEIN, JN [1 ]
BOZOVIC, I [1 ]
VIRSHUP, GF [1 ]
机构：
[1] VARIAN ASSOCIATES INC,EL GINZTON RES CTR,PALO ALTO,CA 94304
来源：
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1995年 / 5卷 / 02期
关键词：
D O I：
10.1109/77.403202
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have explored two high-transition-temperature Josephson junction technologies for application in voltage standard arrays: step-edge junctions made with YBa2Cu3O7-delta and Au normal-metal bridges, and stacked series arrays of Josephson junctions in selectively doped, epitaxially grown Bi2Sr2CaCu2O8 heterostructures. For both kinds of junctions, Shapiro steps induced by a microwave bias were characterized as a function of power. We compare the two technologies with respect to critical current and normal resistance uniformity, maximum achievable critical current, critical-current normal-resistance product, and operating temperature.
引用
收藏
页码：2915 / 2918
页数：4
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