MOLECULAR-DYNAMICS SIMULATION OF THIN-FILM AMORPHOUS-CARBON GROWTH

被引:10
|
作者
GERSTNER, EG [1 ]
PAILTHORPE, BA [1 ]
机构
[1] UNIV SYDNEY,SCH PHYS,SYDNEY,NSW 2006,AUSTRALIA
关键词
D O I
10.1016/0022-3093(95)00221-9
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Molecular dynamics simulations of amorphous diamond thin film growth were carried out using a Stillinger-Weber potential parameterised to describe both sp(2) and sp(3) carbon bonding. The effects of the incident beam energy and angle and substrate temperature were investigated. It was found that in very thin films, not deep enough to allow the generation of compressive stress, atomic impacts lead to the formation of a graphitic surface layer. Results also indicate that the optimal conditions for the formation of tetrahedral sp(3) structures involve low incident beam energy and low substrate temperatures.
引用
收藏
页码:258 / 264
页数:7
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