共 50 条
- [21] ELECTROABSORPTION IN SILICON CARBIDE DOPED WITH BORON AND ILLUMINATED WITH ULTRAVIOLET. Soviet Physics - Lebedev Institute Reports (English translation of Kratkie Soobshcheniya po Fizike: Sbornik, AN SSSR, Fizicheskii Inst. im. P.N. Lebedeva), 1977, (05): : 5 - 8
- [22] LUMINESCENCE OF SCANDIUM-DOPED AND ALUMINUM-DOPED SILICON-CARBIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (08): : 1074 - 1074
- [24] Infrared luminescence from silicon nanostructures heavily doped with boron Semiconductors, 2012, 46 : 275 - 288
- [26] Photoluminescence and Raman spectroscopy characterization of boron- and nitrogen-doped 6H silicon carbide SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 233 - +
- [28] BRIGHT-LINE LUMINESCENCE OF ALUMINUM-DOPED SILICON CARBIDE SOVIET PHYSICS SOLID STATE,USSR, 1970, 12 (01): : 229 - +
- [29] LUMINESCENCE OF SCANDIUM- AND ALUMINUM-DOPED SILICON CARBIDE. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1975, 9 (08):