PREPARATION AND PROPERTIES OF GAAS-LAYERS FOR NOVEL FET STRUCTURES

被引：13

|

作者：

GRIFFITHS, RJM

BLENKINSOP, ID

WIGHT, DR

机构：

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 20期

关键词：

D O I：

10.1049/el:19790448

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：629 / 630

页数：2

相关论文

共 50 条

[1] THE HALL PROFILING OF GAAS-LAYERS AND STRUCTURES
LEITCH, AWR
GOODMAN, SA
VERMAAK, JS
[J]. SOUTH AFRICAN JOURNAL OF SCIENCE, 1991, 87 (06) : 267 - 270
[2] NOISE PROPERTIES OF EPITAXIAL GAAS-LAYERS
AHMED, MK
[J]. SOLID-STATE ELECTRONICS, 1990, 33 (09) : 1143 - 1149
[3] OPTICAL-PROPERTIES OF STRAINED GAAS-LAYERS
XU, ZZ
[J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1995, 7 (39) : L503 - L509
[4] PREPARATION OF P-TYPE GAAS-LAYERS FOR OHMIC CONTACT
MACHAC, P
NAHLIK, J
[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1995, 6 (02) : 115 - 117
[5] PHOTOLUMINESCENT PROPERTIES OF EPITAXIAL SULFUR-DOPED GAAS-LAYERS
BOBROVNIKOVA, IA
VILISOVA, MD
LAVRENTYEVA, LG
POROKHOVNICHENKO, LP
TURSHATOVA, MV
[J]. IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1989, 32 (08): : 120 - 122
[6] ELECTRIC PROPERTIES OF GAAS-LAYERS IRRADIATED BY H+ IONS
BRUDNYI, VN
KRIVOV, MA
POTAPOV, AI
[J]. IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1982, 25 (01): : 39 - 43
[7] RELATIONSHIP OF PROPERTIES OF MBE GROWN GAAS-LAYERS WITH GROWTH-CONDITIONS
DUNG, PT
LAZNICKA, M
PAJASOVA, L
[J]. CZECHOSLOVAK JOURNAL OF PHYSICS, 1986, 36 (06) : 759 - +
[8] INFLUENCE OF YB ON QUALITY OF GAAS-LAYERS
RACZYNSKA, J
STAPOR, A
POTEMSKI, M
LEMANSKABAJOREK, A
FRONC, K
LANGER, JM
[J]. ACTA PHYSICA POLONICA A, 1988, 73 (03) : 411 - 413
[9] INVESTIGATION OF ANTIPHASE INTERFACES IN GAAS-LAYERS
VDOVIN, VI
MILVIDSKII, MG
YUGOVA, TG
[J]. KRISTALLOGRAFIYA, 1991, 36 (03): : 738 - 743
[10] ELECTRICAL-PROPERTIES OF INDIUM DOPED GAAS-LAYERS GROWN BY MBE
MISSOUS, M
SINGER, KE
NICHOLAS, DJ
[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 314 - 318

← 1 2 3 4 5 →