PREPARATION OF P-TYPE GAAS-LAYERS FOR OHMIC CONTACT

被引：2
|
作者：
MACHAC, P
NAHLIK, J
机构：
[1] Department of Solid State Engineering, Institute of Chemical Technology, Prague 6, 16628
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 1995年 / 6卷 / 02期
关键词：
D O I：
10.1007/BF00188195
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The open-tube diffusion of zinc is used for the preparation of p-type layers in gallium arsenide. The process provides the capability of forming reproducible deep diffusions (0.4-2 mu m) over short diffusion times and in the temperature range 600-650 degrees C. TiPdAu contacts are prepared on these layers. Using cw laser annealing we have obtained specific contact resistance 6.5 x 10(-7) Ohm cm(2).
引用
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页码：115 / 117
页数：3
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