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- [1] SELECTIVE DEPOSITION OF TUNGSTEN FILMS BY REDUCTION OF TUNGSTEN HEXAFLUORIDEJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C477 - C477LAMI, PPAULEAU, Y
- [3] DEPOSITION OF TEXTURED CONDENSATES OF TUNGSTEN BY HYDROGEN REDUCTION OF ITS HEXAFLUORIDEPROBLEMS OF ATOMIC SCIENCE AND TECHNOLOGY, 2023, (05): : 143 - 145Shirokov, B. M.Zhuravlyov, O. Yu.Malykhin, D. G.
- [4] KINETICS OF HYDROGEN REDUCTION OF TUNGSTEN HEXAFLUORIDEJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (03) : C102 - &BRECHER, LE
- [5] THE EFFECTS OF CHEMICAL OXIDE ON THE DEPOSITION OF TUNGSTEN BY THE SILICON REDUCTION OF TUNGSTEN HEXAFLUORIDEJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (09) : 2339 - 2345WONG, MKOBAYASHI, NBROWNING, RPAINE, DSARASWAT, KC
- [6] THE EFFECTS OF CHEMICAL OXIDE ON THE DEPOSITION OF TUNGSTEN BY THE SILICON REDUCTION OF TUNGSTEN HEXAFLUORIDEJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C477 - C477WONG, MKOBAYASHI, NBROWNING, RPAINE, DSARASWAT, KC
- [7] MECHANISM FOR CHEMICAL-VAPOR DEPOSITION OF TUNGSTEN ON SILICON FROM TUNGSTEN HEXAFLUORIDEJOURNAL OF APPLIED PHYSICS, 1988, 63 (11) : 5213 - 5219YARMOFF, JAMCFEELY, FR
- [8] TUNGSTEN NUCLEATION ON THERMAL OXIDE DURING LPCVD OF TUNGSTEN BY THE HYDROGEN REDUCTION OF TUNGSTEN HEXAFLUORIDEJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (04) : 1003 - 1008MCCONICA, CMCOOPER, K
- [9] COMPARISON OF THE DIFFUSION BARRIER PROPERTIES OF TUNGSTEN FILMS PREPARED BY HYDROGEN AND SILICON REDUCTION OF TUNGSTEN HEXAFLUORIDETHIN SOLID FILMS, 1989, 171 (02) : 343 - 357THOMAS, OCHARAI, ADHEURLE, FMFINSTAD, TGJOSHI, RV