BOND-ANGLE RELAXATION AND ELECTRONIC-STRUCTURE OF SI AND GE OVERLAYERS ON (110) SURFACES OF III-V SEMICONDUCTORS

被引：7
|
作者：
KALLA, R
POLLMANN, J
机构：
来源：
SURFACE SCIENCE | 1988年 / 200卷 / 01期
关键词：
D O I：
10.1016/0039-6028(88)90434-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：80 / 100
页数：21
相关论文
共 50 条
  • [21] CALCULATION OF THE ATOMIC GEOMETRIES OF THE (110) SURFACES OF III-V COMPOUND SEMICONDUCTORS
    MAILHIOT, C
    DUKE, CB
    CHADI, DJ
    SURFACE SCIENCE, 1985, 149 (2-3) : 366 - 380
  • [22] CATION DEPENDENCE OF THE ELECTRONIC-STRUCTURE OF III-V NITRIDES
    CORKILL, JL
    RUBIO, A
    COHEN, ML
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1994, 6 (05) : 963 - 976
  • [23] Stoichiometry changes by selective vacancy formation on (110) surfaces of III-V semiconductors: Influence of electronic effects
    Semmler, U
    Simon, M
    Ebert, P
    Urban, K
    JOURNAL OF CHEMICAL PHYSICS, 2001, 114 (01): : 445 - 451
  • [24] ELECTRONIC-STRUCTURE OF NEUTRAL AND CHARGED VACANCIES IN GA-RELATED III-V COMPOUND SEMICONDUCTORS
    XU, HQ
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (08) : 4077 - 4086
  • [25] DIVACANCIES IN THE GA-RELATED III-V COMPOUND SEMICONDUCTORS - ELECTRONIC-STRUCTURE AND CHARGE STATES
    XU, HQ
    PHYSICAL REVIEW B, 1992, 46 (19): : 12251 - 12260
  • [26] ATOMIC-ORBITAL INTERPRETATION OF ELECTRONIC-STRUCTURE OF III-V SEMICONDUCTORS - GAAS VERSUS ALAS
    BOGUSLAWSKI, P
    GORCZYCA, I
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (12) : 2169 - 2177
  • [27] ELECTRONIC-STRUCTURE OF SEMI-INFINITE III-V COMPOUND SEMICONDUCTOR SURFACES AND INTERFACES - APPLICATION TO INAS-GASB(110)
    DANDEKAR, NV
    MADHUKAR, A
    LOWRY, DN
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1364 - 1369
  • [28] ELECTRONIC-STRUCTURE OF SI AND GE(111) SURFACES AND THE SI-GE(111) INTERFACE
    AGRAWAL, BK
    PHYSICAL REVIEW B, 1985, 31 (04): : 2517 - 2520
  • [29] H2S adsorption on the (110) surfaces of III-V semiconductors
    Dudzik, E
    Muller, C
    McGovern, IT
    Lloyd, DR
    Patchett, A
    Zahn, DRT
    Johal, T
    McGrath, R
    SURFACE SCIENCE, 1995, 344 (1-2) : 1 - 10
  • [30] Identification of surface anion antisite defects in (110) surfaces of III-V semiconductors
    Ebert, P
    Quadbeck, P
    Urban, K
    Henninger, B
    Horn, K
    Schwarz, G
    Neugebauer, J
    Scheffler, M
    APPLIED PHYSICS LETTERS, 2001, 79 (18) : 2877 - 2879
12345