Silicon-related local vibrational mode absorption in bulk AlGaAs

被引：0
|
作者：
Kaczor, P
Zytkiewicz, ZR
Dobaczewski, L
机构：
来源：
ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4 | 1995年 / 196-卷
关键词：
local vibrational modes; bulk AlGaAs; Si-doping; FTIR-spectroscopy;
D O I：
10.4028/www.scientific.net/MSF.196-201.1091
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A new silicon-related local vibrational mode (LVM) absorption in bulk AlGaAs is reported. It consists of six peaks grouped around 450 cm(-1) which form a distinct pattern. The dependence of this LVM absorption pattern on the alloy composition, doping level and temperature was studied. We believe that the new LVM absorption is a fingerprint of a single defect. Among the discussed microscopic structures the most plausible is a Si-Ga-Si-As pair complex with Si-As acceptor interacting with different Ga, Al nearest neighbour local environments. The relation of the defect structure to the relaxed Si-Ga DX-centre configuration is also considered.
引用
收藏
页码：1091 / 1095
页数：5
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