QUANTUM-CONFINED STARK-EFFECT IN INGAAS/GAAS QUANTUM-WELLS UNDER HIGH ELECTRIC-FIELDS

被引：3
|
作者：
KAVALIAUSKAS, J
KRIVAITE, G
GALICKAS, A
SIMKIENE, I
OLIN, U
OTTOSSON, M
机构：
[1] ROYAL INST TECHNOL,INST OPT RES,S-10044 STOCKHOLM,SWEDEN
[2] ROYAL INST TECHNOL,DEPT PHYS 2,S-10044 STOCKHOLM,SWEDEN
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1995年 / 191卷 / 01期
关键词：
D O I：
10.1002/pssb.2221910116
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Photocurrent and electroreflectance spectroscopies are combined to study the transformation of the quantum confined Stark effect under high electric fields in shallow InGaAs/GaAs quantum wells. Experimental evidences of exciton quenching and carrier tunneling out of the well are obtained. The coupling between quasibound and continuum states in the strong electric field region results in the increase of absorption below the band gap of the barrier.
引用
收藏
页码：155 / 159
页数：5
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