ELECTRON AND HOLE MOBILITIES IN LIGHTLY DOPED SILICON

被引：3
|
作者：
MISIAKOS, K [1 ]
TSAMAKIS, D [1 ]
机构：
[1] NATL TECHN UNIV ATHENS,DEPT ELECT ENGN,GR-10682 ATHENS,GREECE
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 15期
关键词：
D O I：
10.1063/1.111721
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electron and hole mobilities were measured between 78 and 340 K. The method used is based on the frequency dependence of the conductance and the capacitance of a high resistivity diode biased in high injection. The method is insensitive to uncertainties regarding the ionized dopant densities. In the temperature range from 170 to 340 K the carrier mobilities vary as T(-a), where a=2.34+/-0.08 for electrons while for holes a=2.85+/-0.05. At 77.8 K the hole mobility is 14000+/-400 cm2/V s while the electron mobility is 24000+/-800 cm2/V s.
引用
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页码：2007 / 2009
页数：3
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