The Electrical Resistance of Mo0.5W0.5S2 Single Crystal Under Pressure

被引：0
|
作者：
Shah, A. K. [1 ]
Gajjar, P. N. [2 ]
机构：
[1] Bhavins RA Coll Sci, Ahmadabad 380001, Gujarat, India
[2] Gujarat Univ, Univ Sch Sci, Dept Phys, Ahmadabad 380009, Gujarat, India
来源：
TURKISH JOURNAL OF PHYSICS | 2008年 / 32卷 / 05期
关键词：
Electrical resistance; transition metal dichalcogenides; single crystal; structural phase transition;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Single crystals of Mo0.5W0.5S2 were grown by chemical vapour transport and direct vapour transport techniques. The crystals have been characterized by X-ray energy dispersive analysis and X-ray powder diffraction. The dc electrical resistance of the grown single crystals of Mo0.5W0.5S2 was measured in Bridgman anvil set-up to 8 GPa to identify occurrence of structural phase transitions. The drastic changes in electrical resistance were observed at similar to 2.5 GPa and similar to 4.6 GPa, and are similar to the structural phase transitions in WS2 single crystals.
引用
收藏
页码：275 / 277
页数：3
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