MOLECULAR-BEAM EPITAXY OF HG1-XCDXTE - GROWTH AND CHARACTERIZATION

被引：20
|
作者：
FAURIE, JP
机构：
[1] Physics Department, University of Illinois at Chicago, IL
来源：
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS | 1994年 / 29卷 / 1-4期
关键词：
D O I：
10.1016/0960-8974(94)90005-1
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
[No abstract available]
引用
收藏
页码：85 / 159
页数：75
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