SILICON EPITAXY AT LOW-TEMPERATURE, USING UV CLEANING IN A REDUCED PRESSURE CVD SYSTEM

被引：8
|
作者：
REGOLINI, JL
BENSAHEL, D
NISSIM, YI
MERCIER, J
SCHEID, E
PERIO, A
ANDRE, E
机构：
[1] CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
[2] CNRS,ETUD PROPERTIES ELECTR SOLIDES LAB,F-38042 GRENOBLE,FRANCE
[3] CNRS,PHYS COMPOSANTS SEMICOND LAB,F-38031 GRENOBLE,FRANCE
来源：
ELECTRONICS LETTERS | 1988年 / 24卷 / 07期
关键词：
D O I：
10.1049/el:19880276
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：408 / 409
页数：2
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