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- [32] DIFFUSION OF TIN IN N-TYPE AND P-TYPE GALLIUM ANTIMONIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (12): : 1573 - 1574
- [33] PHOTOLUMINESCENCE PARAMETERS OF EPITAXIAL P-TYPE GALLIUM ANTIMONIDE FILMS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (12): : 1427 - 1428
- [34] SEMICONDUCTOR-METAL TRANSITION INDUCED BY MAGNETIC-FIELD IN UNIAXIALLY DEFORMED P-TYPE INDIUM-ANTIMONIDE FIZIKA TVERDOGO TELA, 1979, 21 (01): : 59 - 65
- [37] OPTICAL INVESTIGATION OF P-TYPE INDIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (02): : 141 - 143
- [40] ELECTRICAL PROPERTIES OF SULFUR-DOPED TYPE AND P-TYPE GALLIUM ANTIMONIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (06): : 1059 - &