共 50 条
- [2] THERMOELECTRIC POWER OF P-TYPE INDIUM ANTIMONIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (11): : 1420 - +
- [3] RECOMBINATION PROCESSES IN P-TYPE INDIUM ANTIMONIDE PHYSICAL REVIEW, 1959, 115 (02): : 266 - 273
- [4] IMPACT IONIZATION IN P-TYPE INDIUM-ANTIMONIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (06): : 705 - 706
- [5] ELECTRICAL PROPERTIES OF COMPENSATED P-TYPE INDIUM ANTIMONIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (02): : 227 - +
- [6] OSCILLATIONS OF INJECTED CARRIERS IN P-TYPE INDIUM-ANTIMONIDE PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 13 (02): : 577 - &
- [7] ELECTRICAL PROPERTIES OF PLASTICALLY DEFORMED P-TYPE INDIUM ANTIMONIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (08): : 999 - &
- [8] ELECTRICAL PROPERTIES OF P-TYPE INDIUM ANTIMONIDE AT LOW TEMPERATURES PHYSICAL REVIEW, 1955, 99 (02): : 400 - 405
- [10] NOISE IN P-TYPE INDIUM ANTIMONIDE IN A MAGNETIC FIELD AT ROOM TEMPERATURE SOVIET PHYSICS-SOLID STATE, 1962, 3 (09): : 1918 - 1921