ZEEMAN SPLITTING OF BOUND EXCITONS IN SILICON

被引：0
|
作者：
CHERLOW, JM
AGGARWAL, RL
LAX, B
机构：
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1971年 / 16卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：328 / &
相关论文
共 50 条
  • [21] SPLITTING OF 1S-EXCITONS IN SILICON
    BALSLEV, I
    SOLID STATE COMMUNICATIONS, 1977, 23 (04) : 205 - 206
  • [22] ZEEMAN SPLITTING OF ANOMALOUS SHALLOW BOUND-STATES IN ZNO
    BUTTON, KJ
    LAX, B
    COHN, DR
    ORTENBER.MV
    MOLLWO, E
    HELBIG, R
    PHYSICAL REVIEW LETTERS, 1972, 28 (25) : 1637 - &
  • [23] EXPERIMENTAL STUDY OF ZEEMAN SPLITTING OF BORON LEVELS IN SILICON
    MERLET, F
    PAJOT, B
    ARCAS, P
    JEANLOUIS, AM
    PHYSICAL REVIEW B, 1975, 12 (08): : 3297 - 3317
  • [24] DEFECT COMPLEX-BOUND EXCITONS IN SILICON
    KAMINSKII, AS
    LEIFEROV, BM
    SAFONOV, AN
    FIZIKA TVERDOGO TELA, 1987, 29 (04): : 961 - 970
  • [25] ZEEMAN EFFECT IN SPECTRUM OF EXCITONS BOUND TO ISOELECTRONIC BISMUTH IN INDIUM-PHOSPHIDE
    WHITE, AM
    DEAN, PJ
    FAIRHURST, KM
    BARDSLEY, W
    DAY, B
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (02): : L35 - L39
  • [26] SYSTEMATICS OF BOUND EXCITONS AND BOUND MULTIEXCITON COMPLEXES FOR SHALLOW DONORS IN SILICON
    ELLIOTT, KR
    MCGILL, TC
    SOLID STATE COMMUNICATIONS, 1978, 28 (07) : 491 - 496
  • [27] Zeeman and Davydov splitting of Frenkel excitons in the antiferromagnet CuB2O4
    Kopteva, N. E.
    Kudlacik, D.
    Yakovlev, D. R.
    Eremin, M., V
    Nurmukhametov, A. R.
    Bayer, M.
    Pisarev, R., V
    PHYSICAL REVIEW B, 2022, 105 (02)
  • [28] Effects of interface imperfections on the Zeeman splitting of excitons in diluted magnetic semiconductor quantum wells
    Hagston, WE
    Stirner, T
    Harrison, P
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1997, 75 (03): : 349 - 361
  • [29] ISOELECTRONIC BOUND EXCITONS IN SILICON - THE ROLE OF DEEP ACCEPTORS
    THEWALT, MLW
    ZIEMELIS, UO
    PARSONS, RR
    PHYSICAL REVIEW B, 1981, 24 (06): : 3655 - 3658
  • [30] SPECTROSCOPY OF EXCITONS BOUND TO ISOELECTRONIC DEFECT COMPLEXES IN SILICON
    LIGHTOWLERS, EC
    DAVIES, G
    SOLID STATE COMMUNICATIONS, 1985, 53 (12) : 1055 - 1060
12345