REACTIVE ION-BEAM ETCHING OF ZNSE USING CL2GAS

被引：0
|
作者：
SAITOH, T
YOKOGAWA, T
MUTOH, K
NARUSAWA, T
机构：
来源：
FIRST INTERNATIONAL MEETING ON ADVANCED PROCESSING AND CHARACTERIZATION TECHNOLOGIES: FABRICATION AND CHARACTERIZATION OF SEMICONDUCTOR OPTOELECTRONIC DEVICES AND INTEGRATED CIRCUITS, VOLS 1 AND 2 | 1989年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：A51 / A54
页数：4
相关论文
共 50 条
  • [41] A COMPARISON OF REACTIVE ION-BEAM MILLING AND REACTIVE ION ETCHING FOR MULTILEVEL RESIST PATTERNING
    CASTELLANO, RN
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) : 2340 - 2343
  • [42] REACTIVE AND CHEMICALLY ASSISTED ION-BEAM ETCHING OF SI AND SIO2
    CARTER, MA
    GOLDSPINK, GF
    VACUUM, 1988, 38 (01) : 5 - 10
  • [43] NANOFABRICATION ON INP USING FOCUSED ION-BEAM LITHOGRAPHY AND CL2 ETCHING - PROCESS AND CONTROL
    CHU, CH
    WANG, YL
    HSIEH, YF
    HARRIOTT, LR
    WADE, HH
    TEMKIN, H
    HAMM, RA
    MATERIALS CHEMISTRY AND PHYSICS, 1993, 33 (1-2) : 158 - 164
  • [44] REACTIVE ION-BEAM ETCHING OF MOSI2 IN CCL4
    POWELL, RA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (05) : 1164 - 1167
  • [45] ION-BEAM ANALYSIS OF ZNSE
    SASAKI, Y
    YOSHIDA, K
    NISHIYAMA, F
    YAO, T
    ZHU, Z
    MORI, H
    KAWASHIMA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (4B): : L449 - L451
  • [46] REACTIVE FAST-ATOM BEAM ETCHING OF GAAS USING CL2 GAS
    SHIMOKAWA, F
    TANAKA, H
    UENISHI, Y
    SAWADA, R
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (06) : 2613 - 2618
  • [47] REACTIVE ION-BEAM ETCHING CHARACTERISTICS OF LINBO3
    REN, CX
    YANG, J
    ZHENG, YF
    CHEN, LZ
    CHEN, GL
    TSOU, SC
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 1018 - 1021
  • [48] REACTIVE ION-BEAM ETCHING OF TANTALUM SILICIDE FOR VLSI APPLICATIONS
    BAUDRANT, A
    PASSERAT, A
    BOLLINGER, D
    SOLID STATE TECHNOLOGY, 1983, 26 (09) : 183 - 187
  • [49] MICROFABRICATION OF LINBO3 BY REACTIVE ION-BEAM ETCHING
    MATSUI, S
    YAMATO, T
    ARITOME, H
    NAMBA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (08) : L463 - L465
  • [50] Improvement of Adhesion of Copper on Polyimide by Reactive Ion-Beam Etching
    Ruoff, Arthur L.
    Kramer, Edward J.
    Li, Che-Yu
    IBM Journal of Research and Development, 1988, 32 (05): : 626 - 630
12345