Mechanical poling was applied to a BaTiO3 single crystal grown by the top-seeded solution growth (TSSG) method to remove its 90-degrees domain walls, and then four-step electrical poling was applied to rearrange the 180-degrees domain configuration. In each of these steps, the dielectric constant (from 50 kHz to 10 MHz) was measured by using an impedance analyzer, and the 180-degrees domains were observed by the etching method. The dielectric spectra were confirmed to vary with rearrangement in 180-degrees domain configuration. Dielectric constant epsilon(c) in the [001] direction was 130 at 100 kHz and 58 at 10 MHz. Dielectric constant epsilon(a) in the [100] direction was 4700 at 100 kHz and 1900 at 10 MHz.
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Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Wang, Yonggang
Xu, Gang
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Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Xu, Gang
Yang, Linlin
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Shandong Res & Design Inst Ind Ceram, Zibo 255031, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Yang, Linlin
Ren, Zhaohui
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Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Ren, Zhaohui
Wei, Xiao
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Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Wei, Xiao
Weng, Wenjian
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Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Weng, Wenjian
Du, Piyi
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Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Du, Piyi
Shen, Ge
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Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Shen, Ge
Han, Gaorong
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Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China