HIGH-GAIN, HIGH-SPEED INP/INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A STEP-GRADED BASE-COLLECTOR HETEROJUNCTION

被引：22
|
作者：
WILLEN, B [1 ]
WESTERGREN, U [1 ]
ASONEN, H [1 ]
机构：
[1] TAMPERE UNIV TECHNOL,DEPT PHYS,TAMPERE,FINLAND
来源：
IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 11期
关键词：
D O I：
10.1109/55.468273
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We show that by using InP for the emitter and collector layers, and a thin high-doped base layer, it is possible to achieve bath a high de current gain and a high maximum frequency of oscillation, We have fabricated InP/InGaAs double heterojunction bipolar transistors (DHBT's) with cutoff frequencies f(T) and f(max) Of 92 and 95 GHz, respectively, with a de current gain of over 100. The maximum cutoff frequencies were 107 and 104 GHz.
引用
收藏
页码：479 / 481
页数：3
相关论文
共 50 条
  • [41] Type-II base-collector performance advantages and limitations in high-speed NpN double heterojunction bipolar transistors (DHBTs)
    Bolognesi, CR
    Dvorak, MW
    Watkins, SP
    IEICE TRANSACTIONS ON ELECTRONICS, 2003, E86C (10): : 1929 - 1934
  • [42] A PROPOSED COLLECTOR DESIGN OF DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS FOR POWER APPLICATIONS
    LIU, W
    PAN, DS
    IEEE ELECTRON DEVICE LETTERS, 1995, 16 (07) : 309 - 311
  • [43] HIGH-SPEED INP/INGAAS DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS WITH SUPPRESSED COLLECTOR CURRENT BLOCKING
    KURISHIMA, K
    NAKAJIMA, H
    KOBAYASHI, T
    MATSUOKA, Y
    ISHIBASHI, T
    APPLIED PHYSICS LETTERS, 1993, 62 (19) : 2372 - 2374
  • [44] COINTEGRATION OF RESONANT-TUNNELING AND DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS ON INP
    SEABAUGH, AC
    BEAM, EA
    TADDIKEN, AH
    RANDALL, JN
    KAO, YC
    IEEE ELECTRON DEVICE LETTERS, 1993, 14 (10) : 472 - 474
  • [45] Lateral carrier diffusion and current gain in terahertz InGaAs/InP double-heterojunction bipolar transistors
    Chiang, Han-Wei
    Rode, Johann C.
    Choudhary, Prateek
    Rodwell, Mark J. W.
    JOURNAL OF APPLIED PHYSICS, 2014, 115 (03)
  • [46] PREDICTED PERFORMANCE OF HIGH-SPEED INTEGRATED-INJECTION LOGIC USING INGAAS/INP HETEROJUNCTION BIPOLAR-TRANSISTORS
    HOUSTON, PA
    LEE, KC
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (05) : 1080 - 1084
  • [47] HIGH-SPEED INGAAS(P) INP DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS
    NOTTENBURG, RN
    BISCHOFF, JC
    PANISH, MB
    TEMKIN, H
    IEEE ELECTRON DEVICE LETTERS, 1987, 8 (06) : 282 - 284
  • [48] Ultra-high speed, low power monolithic photoreceiver using InP/InGaAs double-heterojunction bipolar transistors
    Sano, E
    Sano, K
    Otsuji, T
    Kurishima, K
    Yamahata, S
    ELECTRONICS LETTERS, 1997, 33 (12) : 1047 - 1048
  • [49] COLLECTOR EMITTER OFFSET VOLTAGE IN SINGLE-BASE AND DOUBLE-BASE INGAAS(P)/INP HETEROJUNCTION BIPOLAR-TRANSISTORS
    CHEN, SC
    SU, YK
    LEE, CZ
    SOLID-STATE ELECTRONICS, 1992, 35 (04) : 553 - 560
  • [50] INGAAS/INALAS/INP COLLECTOR-UP MICROWAVE HETEROJUNCTION BIPOLAR-TRANSISTORS
    SATO, H
    VLCEK, JC
    FONSTAD, CG
    MESKOOB, B
    PRASAD, S
    IEEE ELECTRON DEVICE LETTERS, 1990, 11 (10) : 457 - 459
12345