INFLUENCE OF ELECTRON-IRRADIATION ON THE HALL-MOBILITY OF HOLES IN INVERSION-LAYERS OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES

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作者：
GUZEV, AA
GURTOV, VA
RZHANOV, AV
FRANTSUZOV, AA
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1980年 / 14卷 / 04期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：451 / 454
页数：4
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