ULTRAFAST SUPERCONDUCTIVE SWITCH

被引：6
|
作者：
GERSHENZON, EM
GOLTSMAN, GN
DZARDANOV, AL
ZORIN, MA
机构：
[1] Physical Department, State Pedagogical University, Moscow 119435, 1, M.Pirogovskaya St
来源：
IEEE TRANSACTIONS ON MAGNETICS | 1991年 / 27卷 / 02期
关键词：
D O I：
10.1109/20.133801
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Transition from superconductive to resistive state caused by infrared radiation and bias current pulses was investigated in order to minimize switching time tau and driving power W. Experimental results for Nb microstrips confirm the correctness of calculations based on the model of electron heating. For Nb switches, tau measured directly is 0,3-0,8 ns for radiation pulses and 1-3 ns for bias current pulses at T = 4.2 K, while for YBaCuO switches at T = 77 K it is expected to be several ps. For an YBaCuO sample with the dimensions of 5 x 2 x 0, 15-mu-m2, W was 10 nW and it can be further reduced to the order of several mu-W by decreasing the volume of the sample.
引用
收藏
页码：2844 / 2846
页数：3
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