NATURAL AND FORCED-CONVECTION OF MOLTEN SILICON DURING CZOCHRALSKI SINGLE-CRYSTAL GROWTH

被引：55
|
作者：
KAKIMOTO, K
EGUCHI, M
WATANABE, H
HIBIYA, T
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1989年 / 94卷 / 02期
关键词：
D O I：
10.1016/0022-0248(89)90016-X
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：412 / 420
页数：9
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