POSITRON-ANNIHILATION STUDY OF VACANCY DEFECTS IN GAAS LIQUID-PHASE EPITAXIAL LAYERS

被引：1
|
作者：
TU, XZ [1 ]
机构：
[1] CHINESE ACAD SCI,INST SEMICOND,BEIJING,PEOPLES R CHINA
来源：
JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 06期
关键词：
D O I：
10.1063/1.339434
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2585 / 2586
页数：2
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