CONVERGENT-BEAM ELECTRON-DIFFRACTION STUDY OF MODULATIONS IN SEMICONDUCTOR SUPERLATTICES

被引：3
|
作者：
FUNG, KK [1 ]
XIE, QH [1 ]
DUAN, XF [1 ]
机构：
[1] CHINESE ACAD SCI,BEIJING LAB ELECTRON MICROSCOPY,BEIJING 100080,PEOPLES R CHINA
来源：
ULTRAMICROSCOPY | 1991年 / 38卷 / 02期
关键词：
D O I：
10.1016/0304-3991(91)90115-M
中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
The dependence of zone axis superlattice higher-order Laue zone (HOLZ) lines of reflections of AlAs/GaAs superlattices on the accelerating voltage of the electron microscope and the specimen thickness has been studied by conventional zone axis convergent-beam electron diffraction (CBED) and large-angle CBED Tanaka dark-field patterns. This is compared with satellite sidebands in a GeSi/Si strained-layer superlattice with a larger period of modulation. It is shown that zone axis superlattice HOLZ lines and satellite sidebands in Tanaka dark-field patterns are equivalent.
引用
收藏
页码：143 / 148
页数：6
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