SCREENING OF DONOR IONS IN SILICON

被引：3
|
作者：
KIRCZENOW, G [1 ]
BARRIE, R [1 ]
BERGERSEN, B [1 ]
机构：
[1] UNIV BRITISH COLUMBIA,DEPT PHYS,VANCOUVER V6T 1W5,BC,CANADA
来源：
PHYSICAL REVIEW B | 1979年 / 19卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.19.2139
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：2139 / 2148
页数：10
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