A JUNCTION TRANSISTOR TETRODE FOR HIGH-FREQUENCY USE

被引:16
|
作者
WALLACE, RL
SCHIMPF, LG
DICKTEN, E
机构
来源
关键词
D O I
10.1109/JRPROC.1952.273968
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1395 / 1400
页数:6
相关论文
共 50 条
  • [21] HETERO JUNCTION BIPOLAR TRANSISTOR-BASED CASCODE AMPLIFIER WITH HIGH-FREQUENCY LOSS COMPENSATION NETWORK
    Wang, Rong
    Gao, Huai
    Chatchaikarn, Aroonchat
    Li, G. P.
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2009, 51 (10) : 2410 - 2413
  • [22] HIGH FREQUENCY RESPONSE OF A BIPOLAR JUNCTION TRANSISTOR.
    Siedlecki, J.C.
    1980, (52):
  • [23] HIGH-FREQUENCY POWER GAIN OF JUNCTION TRANSISTORS
    PRITCHARD, RL
    PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1955, 43 (09): : 1075 - 1085
  • [24] EXCESS HIGH-FREQUENCY NOISE IN JUNCTION TRANSISTORS
    HYDE, FJ
    ROBERTS, HJ
    BUCKINGHAM, BE
    PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (504): : 1076 - &
  • [25] HIGH-FREQUENCY ROLLOFF IN THE RESPONSE OF JUNCTION DETECTORS
    HAAS, DR
    YU, T
    WURL, JG
    GUSTAFSON, TK
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1985, 2 (12) : 1913 - 1919
  • [26] HIGH-FREQUENCY HIGH-POWER STATIC INDUCTION TRANSISTOR
    NISHIZAWA, JI
    YAMAMOTO, K
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (03) : 314 - 322
  • [27] LDMOS Transistor High-Frequency Performance Enhancements by Strain
    Chen, Kun-Ming
    Huang, Guo-Wei
    Chen, Bo-Yuan
    Chiu, Chia-Sung
    Hsiao, Chih-Hua
    Liao, Wen-Shiang
    Chen, Ming-Yi
    Yang, Yu-Chi
    Wang, Kai-Li
    Liu, Chee Wee
    IEEE ELECTRON DEVICE LETTERS, 2012, 33 (04) : 471 - 473
  • [28] EFFECTS OF PASSIVATION LAYERS ON HIGH-FREQUENCY TRANSISTOR STABILITY
    SHIONO, N
    REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1978, 26 (3-4): : 547 - 556
  • [29] Transistor converters for power supply to high-frequency tools
    Shogenov, A.Kh.
    Russian Electrical Engineering, 2002, 73 (03) : 29 - 34
  • [30] High-frequency current instabilities in a silicon Auger transistor
    Ostroumova, EV
    Rogachev, AA
    SEMICONDUCTORS, 1999, 33 (09) : 1027 - 1029