TEMPERATURE AND LIGHT-INTENSITY DEPENDENCE OF PHOTOCONDUCTIVITY IN OFF-STOICHIOMETRIC HYDROGENATED AMORPHOUS-SILICON NITRIDE

被引：2

作者：

TESSLER, LR ^{[1
]}

ALVAREZ, F ^{[1
]}

机构：

[1] UNIV ESTADUAL CAMPINAS,INST FIS,BR-13100 CAMPINAS,SP,BRAZIL

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1986年 / 83卷 / 1-2期

基金：

巴西圣保罗研究基金会;

关键词：

LIGHT INTENSITY - MONOCHROMATIC EXCITATION - NITROGEN CONTENT - OPTICAL GAP - SILANE;

D O I：

10.1016/0022-3093(86)90051-7

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

(Edited Abstract)

引用

页码：1 / 11

页数：11

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