TEMPERATURE AND LIGHT-INTENSITY DEPENDENCE OF PHOTOCONDUCTIVITY IN OFF-STOICHIOMETRIC HYDROGENATED AMORPHOUS-SILICON NITRIDE

被引：2
|
作者：
TESSLER, LR [1 ]
ALVAREZ, F [1 ]
机构：
[1] UNIV ESTADUAL CAMPINAS,INST FIS,BR-13100 CAMPINAS,SP,BRAZIL
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1986年 / 83卷 / 1-2期
基金：
巴西圣保罗研究基金会;
关键词：
LIGHT INTENSITY - MONOCHROMATIC EXCITATION - NITROGEN CONTENT - OPTICAL GAP - SILANE;
D O I：
10.1016/0022-3093(86)90051-7
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
(Edited Abstract)
引用
收藏
页码：1 / 11
页数：11
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