ETCHING CHARACTERISTICS OF DEFECTS IN THE INGAASP-INP LPE LAYERS

被引:13
|
作者
KOTANI, T
KOMIYA, S
NAKAI, S
YAMAOKA, Y
机构
关键词
D O I
10.1149/1.2129391
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:2273 / 2277
页数:5
相关论文
共 50 条
  • [31] TEMPERATURE CHARACTERISTICS OF THRESHOLD CURRENT IN INGAASP-INP DOUBLE-HETEROSTRUCTURE LASERS
    YANO, M
    NISHI, H
    TAKUSAGAWA, M
    JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4022 - 4028
  • [32] TEMPERATURE-DEPENDENCE OF THRESHOLD AND ELECTRICAL CHARACTERISTICS OF INGAASP-INP DH LASERS
    DUTTA, NK
    NELSON, RJ
    BARNES, PA
    ELECTRONICS LETTERS, 1980, 16 (17) : 653 - 654
  • [33] INGAASP-INP NATIVE OXIDE STRIPE LASERS
    SAKAI, S
    UMENO, M
    AOKI, T
    TOBE, M
    AMEMIYA, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (05) : 1003 - 1004
  • [34] HIGH-SENSITIVITY INGAASP-INP PHOTOTRANSISTORS
    TOBE, M
    AMEMIYA, Y
    SAKAI, S
    UMENO, M
    APPLIED PHYSICS LETTERS, 1980, 37 (01) : 73 - 75
  • [35] OSCILLATION CHARACTERISTICS IN INGAASP-INP DH LASERS WITH SELF-ALIGNED STRUCTURE
    YANO, M
    NISHI, H
    TAKUSAGAWA, M
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (12) : 1388 - 1395
  • [36] THEORETICAL AND EXPERIMENTAL-STUDY OF THRESHOLD CHARACTERISTICS IN INGAASP-INP DH LASERS
    YANO, M
    NISHI, H
    TAKUSAGAWA, M
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (07) : 571 - 579
  • [37] MODULATION CHARACTERISTICS OF INGAASP-INP LEDS AT 1.5 MU-M WAVELENGTH
    MACHIDA, S
    NAGAI, H
    KIMURA, T
    ELECTRONICS LETTERS, 1979, 15 (06) : 175 - 177
  • [38] PREVENTION OF CIRCUMFERENTIAL MELTBACK IN LPE GROWTH OF INP INGAASP INGAAS INP LAYERS FOR AVALANCHE PHOTO-DIODES
    KONDO, S
    AMANO, T
    NAGAI, H
    JOURNAL OF CRYSTAL GROWTH, 1983, 61 (01) : 8 - 14
  • [39] INSITU IN ETCHING TECHNIQUE FOR LPE INP
    WRICK, V
    SCILLA, GJ
    EASTMAN, LF
    HENRY, RL
    SWIGGARD, EM
    ELECTRONICS LETTERS, 1976, 12 (16) : 394 - 395
  • [40] INGAASP-INP BH LASERS ON P-TYPE INP SUBSTRATES
    NAKANO, Y
    TAKAHEI, K
    NOGUCHI, Y
    NAGAI, H
    NAWATA, K
    TOKUNAGA, M
    ELECTRONICS LETTERS, 1981, 17 (18) : 645 - 646