PROCESS SIMULATION FOR LASER RECRYSTALLIZATION

被引：0
|
作者：
HU, B
SEIDL, A
NEUMAYER, G
BUCHNER, R
HABERGER, K
机构：
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 1992年 / E75C卷 / 02期
关键词：
PROCESS SIMULATION; LASER RECRYSTALLIZATION; CRYSTAL GROWTH; GRAIN BOUNDARY; MICRO-ABSORBER;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Modeling and numerical simulation of crystal growth of Si film and heat transport in 3D structure were made for optimization of physical and geometrical parameters used during laser recrystallization. Based on simulations a new concept called micro-absorber was introduced for obtaining defect-free Si films.
引用
收藏
页码：138 / 144
页数：7
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