ION-IMPLANTED MICROSTRUCTURE BARRIER IN CVD RHENIUM

被引：5

作者：

KIM, KT ^{[1
]}

WELSCH, G ^{[1
]}

机构：

[1] CASE WESTERN RESERVE UNIV,DEPT MAT SCI & ENGN,CLEVELAND,OH 44106

来源：

MATERIALS LETTERS | 1991年 / 12卷 / 04期

关键词：

D O I：

10.1016/0167-577X(91)90004-P

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Potassium was ion-implanted at 150 keV into CVD rhenium with a dose of 1 x 10(17)/cm2. A second layer of CVD rhenium was deposited on top of the first layer. During high-temperature exposure, potassium bubbles were developed in the doped layer. They provide an impenetrable boundary during grain growth at high temperature and the occurrence of transverse grain boundaries through the thickness of the CVD deposits is prevented.

引用

页码：229 / 232

页数：4

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