DYNAMIC MEMORY CHARACTERISTICS OF INGAASP PHOTONIC SWITCHING DEVICES

被引：0
|
作者：
KOWALSKY, W
MAEHNSS, J
EBELING, KJ
机构：
来源：
NONLINEAR OPTICAL MATERIALS II | 1989年 / 1127卷
关键词：
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
引用
收藏
页码：77 / 79
页数：3
相关论文
共 50 条
  • [31] Active InGaAsP/InP Photonic Bandgap Waveguides for Wavelength-Selective Switching
    Calo, Giovanna
    D'Orazio, Antonella
    Grande, Marco
    Marrocco, Valeria
    Petruzzelli, Vincenzo
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2011, 47 (02) : 172 - 181
  • [32] SWITCHING CHARACTERISTICS OF MINPN DEVICES
    CHANG, DCY
    LEE, CL
    LEI, TF
    SOLID-STATE ELECTRONICS, 1989, 32 (03) : 179 - 189
  • [33] Optical loop memory for photonic switching application
    Srivastava, Rajiv
    Singh, Rajat Kumar
    Singh, Yatindra Nath
    JOURNAL OF OPTICAL NETWORKING, 2007, 6 (04): : 341 - 348
  • [34] Switching time of optical memory devices composed of photonic crystals with an impurity three-level atom
    Nihei, H
    Okamoto, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (12): : 6835 - 6840
  • [35] Switching time of optical memory devices composed of photonic crystals with an impurity three-level atom
    Polytechnic College Aomori, 2-171 Iizume, Goshogawara, Aomori 037-0002, Japan
    不详
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2001, 40 (12): : 6835 - 6840
  • [36] A Study on the Dynamic Switching Characteristics of p-GaN HEMT Power Devices
    Fan, Chen
    Zhang, Haitao
    Liu, Huipeng
    Pan, Xiaofei
    Yan, Su
    Chen, Hongliang
    Guo, Wei
    Cai, Lin
    Wei, Shuhua
    MICROMACHINES, 2024, 15 (08)
  • [37] Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices
    Gao, Shuang
    Song, Cheng
    Chen, Chao
    Zeng, Fei
    Pan, Feng
    JOURNAL OF PHYSICAL CHEMISTRY C, 2012, 116 (33): : 17955 - 17959
  • [38] In-memory computing using electrical and photonic memory devices
    Sebastian, Abu
    2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS EUROPE & EUROPEAN QUANTUM ELECTRONICS CONFERENCE (CLEO/EUROPE-EQEC), 2019,
  • [39] Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices
    Kim, Yong-Mu
    Lee, Jang-Sik
    JOURNAL OF APPLIED PHYSICS, 2008, 104 (11)
  • [40] Configurable Resistive Switching between Memory and Threshold Characteristics for Protein-Based Devices
    Wang, Hong
    Du, Yuanmin
    Li, Yingtao
    Zhu, Bowen
    Leow, Wan Ru
    Li, Yuangang
    Pan, Jisheng
    Wu, Tao
    Chen, Xiaodong
    ADVANCED FUNCTIONAL MATERIALS, 2015, 25 (25) : 3825 - 3831
12345