GROWTH OF EPITAXIAL BETA-FESI2 ON (100)SILICON USING FE-TI-SI DIFFUSION COUPLES

被引：1

作者：

LARSEN, KK ^{[1
]}

TAVARES, J ^{[1
]}

BENDER, H ^{[1
]}

DONATON, RA ^{[1
]}

LAUWERS, A ^{[1
]}

MAEX, K ^{[1
]}

机构：

[1] IMEC, B-3001 LOUVAIN, BELGIUM

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 01期

关键词：

D O I：

10.1063/1.360580

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial semiconducting iron-disilicide grains have been formed using an Fe-Ti bilayer on (100) silicon. The reaction kinetics of the Fe-Ti-Si diffusion couple have been studied in detail as a function of annealing conditions, and the intermediate titanium thickness. Both rapid thermal annealing and long-time furnace annealing have been used in this investigation. After a two-stage annealing sequence, with a selective wet etch removal of the unreacted top metal stack in between, a distinct trilayered structure was formed. This trilayer was found to consist of a top layer of smaller β-FeSi2 grains of random orientation, an amorphous Ti-O-Fe-Si layer with nanocrystallites embedded, and a bottom layer of uniformly large coherently epitaxial β-FeSi2 grains. © 1995 American Institute of Physics.

引用

页码：599 / 601

页数：3

共 50 条

[31] SYNTHESIS OF BETA-FESI2 AND ALPHA-FESI2 PHASES BY FE ION-IMPLANTATION INTO SI USING METAL VAPOR VACUUM-ARC ION-SOURCE
LIU, BX
ZHU, DH
LU, HB
PAN, F
TAO, K
JOURNAL OF APPLIED PHYSICS, 1994, 75 (08) : 3847 - 3854
[32] SELECTIVE AND EPITAXIAL DEPOSITION OF BETA-FESI2 ON SILICON BY RAPID THERMAL PROCESSING-CHEMICAL VAPOR-DEPOSITION USING A SOLID IRON SOURCE
REGOLINI, JL
TRINCAT, F
BERBEZIER, I
SHAPIRA, Y
APPLIED PHYSICS LETTERS, 1992, 60 (08) : 956 - 958
[33] Surface diffusion of Fe and island growth of FeSi2 on Si(111) surfaces
Wohllebe, A
Hollander, B
Mesters, S
Dieker, C
Crecelius, G
Michelsen, W
Mantl, S
THIN SOLID FILMS, 1996, 287 (1-2) : 93 - 100
[34] REACTIVE DEPOSITION EPITAXIAL-GROWTH OF BETA-FESI2 FILM ON SI(111) - IN-SITU OBSERVATION BY REFLECTIVE HIGH-ENERGY ELECTRON-DIFFRACTION
WANG, LW
LIN, CG
SHEN, QW
LIN, X
NI, RS
ZOU, SC
APPLIED PHYSICS LETTERS, 1995, 66 (25) : 3453 - 3455
[35] Optimization of substrate pretreatment and deposition conditions for epitaxial growth of β-FeSi2 film on Si(100)
Yamaguchi, Kenji
Hamamoto, Satoshi
Hojou, Kiichi
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 12, 2013, 10 (12): : 1699 - 1703
[36] Growth of epitaxial SrTiO3 on epitaxial (Ti,Al)N/Si(100) substrate using Ti-buffer layer
Sano, K
Ohara, R
Kawakubo, T
IEICE TRANSACTIONS ON ELECTRONICS, 2001, E84C (06): : 808 - 813
[37] Epitaxial growth of bcc Fe films on Al(100) surfaces using Ti as an interface stabilizer
Ramana, CV
Winward, N
Smith, RJ
Choi, BS
SURFACE SCIENCE, 2004, 551 (03) : 189 - 203
[38] EPITAXIAL-GROWTH OF FESI2 IN FE THIN-FILMS ON SI WITH A THIN INTERPOSING NI LAYER
CHENG, HC
YEW, TR
CHEN, LJ
APPLIED PHYSICS LETTERS, 1985, 47 (02) : 128 - 130
[39] Radiation enhanced diffusion of ion implanted Fe in Si(100) observed in ion beam synthesis of β-FeSi2
Maeda, Y
Fujita, T
Umezawa, K
Miyake, K
MICROSCOPY OF SEMICONDUCTING MATERIALS 1997, 1997, (157): : 511 - 514
[40] Morphology phase diagram of a model for diffusion and growth of silicon on Si(100)-(2 × 1)
Universidad Nacional de Mar del, Plata, Mar del Plata, Argentina
Surf Sci, 1-3 (259-268):

← 1 2 3 4 5 →