NUMERICAL-ANALYSIS OF STABILITY PROPERTY OF AN OPTICALLY INJECTION-LOCKED SEMICONDUCTOR-LASER TAKING ACCOUNT OF GAIN SATURATION

被引：0
|
作者：
IIYAMA, K
HAYASHI, K
IDA, Y
机构：
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 1992年 / E75C卷 / 12期
关键词：
OPTOELECTRONICS; SEMICONDUCTOR LASER; OPTICAL INJECTION-LOCKING; GAIN SATURATION;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Stability property of an optically injection-locked semiconductor laser taking account of gain saturation is discussed. Numerical analysis shows that stable locking region is broadened due to gain saturation. This is because of rapid damping of relaxation oscillation due to gain saturation. It is also found that stable locking region is also broadened with increasing injection current since damping of relaxation oscillation becomes strong with increasing injection current. Numerical calculations of lasing spectrum show that the magnitude of sidepeaks appeared at harmonics of relaxation oscillation frequency under unstable locking condition are suppressed due to gain saturation.
引用
收藏
页码：1536 / 1540
页数：5
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