OPTOELECTRONIC SWITCHES AND MULTIGIGABIT 8-1 TIME MULTIPLEXER

被引：1
|
作者：
CHANG, CT
ALBARES, DJ
IMTHURN, GP
OGDEN, TR
TAYLOR, MJ
GARCIA, GA
机构：
[1] USN,CTR OCEAN SYST,SAN DIEGO,CA 92152
[2] GEN ATOM CO,SAN DIEGO,CA 92138
[3] UNIV SO CALIF,LOS ANGELES,CA 90089
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 09期
关键词：
D O I：
10.1109/16.57158
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Optoelectronic metal-semiconductor-metal (MSM) switches in InP are studied and used as sampling elements in a digital time division multiplexer. We find that switch performance can range from the depletion-layer photodiode to the photoconductor regime as the activating light intensity increases. The multiplexer had an 8:1 ratio, a 2-V signal bias, >25-dB S/N, and a serial rate of at least 2.5 Gb/s. This multiplexer with its high S/N and the timing stability intrinsic to fiber delay lines will be advantageous for high-speed digital communications. © 1990 IEEE
引用
收藏
页码：1969 / 1975
页数：7
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