PREFERENTIALLY ORIENTED CRYSTAL-GROWTH IN DYNAMIC MIXING PROCESS - AN APPROACH BY MONTE-CARLO SIMULATION

被引:17
|
作者
KIUCHI, M
CHAYAHARA, A
HORINO, Y
FUJII, K
SATOU, M
KANG, HJ
BEAG, YW
KIMURA, Y
SHIMIZU, R
机构
[1] CHUNGBUK NATL UNIV,DEPT PHYS,CHUNGHUK 310,SOUTH KOREA
[2] OSAKA UNIV,DEPT APPL PHYS,SUITA,OSAKA 565,JAPAN
关键词
Crystal growth; Dynamic mixing method; Ion beam process; Monte Carlo simulation; Preferred orientation; Titanium nitride;
D O I
10.1143/JJAP.29.2059
中图分类号
O59 [应用物理学];
学科分类号
摘要
Titanium nitride films produced by a dynamic mixing method have a preferential crystallographic orientation, and the orientation varies with the arrival ratio of the depositing elements. For this study, we performed a Monte Carlo simulation of the damaging process caused by nitrogen ion irradiation onto (111) and (100) planes of a TiN single crystal. The simulation predicts that in (100)TiN, N+penetrates through the open channel, losing its kinetic energy mainly by electronic stopping, while N+loses its kinetic energy mainly by nuclear stopping in (111)TiN, leading the crystal to be amorphous. The contribution of this dynamic mixing process to the development of preferred orientation is discussed. © 1990 IOP Publishing Ltd.
引用
收藏
页码:2059 / 2065
页数:7
相关论文
共 50 条
  • [41] MONTE-CARLO SIMULATION AS TOOL FOR PROCESS REENGINEERING
    BACK, WE
    BELL, LC
    JOURNAL OF MANAGEMENT IN ENGINEERING, 1995, 11 (05) : 46 - 53
  • [42] MONTE-CARLO SIMULATION OF THE GROWTH OF WETTING LAYERS
    MON, KK
    BINDER, K
    LANDAU, DP
    PHYSICAL REVIEW B, 1987, 35 (07): : 3683 - 3685
  • [43] FAST MONTE-CARLO SIMULATION OF MBE GROWTH
    MAKSYM, PA
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (06) : 594 - 596
  • [44] NUCLEATION GROWTH PROCESSES - MONTE-CARLO SIMULATION
    VANLEEUWEN, C
    VANDEREERDEN, JP
    SURFACE SCIENCE, 1977, 64 (01) : 237 - 250
  • [45] MONTE-CARLO SIMULATION OF GRAIN-GROWTH
    SROLOVITZ, DJ
    ANDERSON, MP
    GREST, GS
    SAHNI, PS
    SAFRAN, SA
    JOURNAL OF METALS, 1983, 35 (08): : A60 - A60
  • [46] MONTE-CARLO SIMULATION OF GRAIN-GROWTH
    MORHACOVA, E
    CRYSTAL RESEARCH AND TECHNOLOGY, 1994, 29 (08) : K99 - K102
  • [47] MONTE-CARLO SIMULATION OF EPITAXIAL-GROWTH
    PLOTZ, WM
    HINGERL, K
    SITTER, H
    PHYSICAL REVIEW B, 1992, 45 (20): : 12122 - 12125
  • [48] MONTE-CARLO SIMULATION OF GRAIN-GROWTH
    SAITO, Y
    ENOMOTO, M
    ISIJ INTERNATIONAL, 1992, 32 (03) : 267 - 274
  • [49] MONTE-CARLO SIMULATION OF GRAIN-GROWTH
    SROLOVITZ, DJ
    ANDERSON, MP
    SAHNI, P
    GREST, G
    JOURNAL OF METALS, 1982, 35 (12): : A83 - A83
  • [50] MONTE-CARLO SIMULATION OF GROWTH AND RECOVERY OF SILICON
    KERSULIS, S
    MITIN, V
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 29 (1-3): : 34 - 37