LOW TO HIGH INJECTIONS IN DOUBLE-DIFFUSED TRANSISTORS

被引：1
|
作者：
HUANG, JST
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1968年 / ED15卷 / 11期
关键词：
D O I：
10.1109/T-ED.1968.16539
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：940 / &
相关论文
共 50 条
  • [31] CALCULATION OF INTRINSIC TRANSPORT PARAMETERS OF A DOUBLE-DIFFUSED TRANSISTOR
    YANG, ES
    SOLID-STATE ELECTRONICS, 1969, 12 (05) : 399 - +
  • [32] High-Voltage Lateral Double-Diffused Metal-Oxide Semiconductor with Double Superjunction
    Wu, Lijuan
    Wu, Yiqing
    Zhang, Yinyan
    Lei, Bing
    Zhu, Lin
    Huang, Ye
    JOURNAL OF ELECTRONIC MATERIALS, 2019, 48 (04) : 2456 - 2462
  • [33] DEPLETION-LAYER CALCULATIONS OF A DOUBLE-DIFFUSED JUNCTION
    LIN, HC
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (09) : 1839 - 1841
  • [34] Annealing influence on recovery of electrically stressed power vertical double-diffused metal oxide semiconductor transistors
    Department of Mathematics, Physics and Informatics, University of Niš, Faculty of Civil Engineering and Architecture, Aleksandra Medvedeva 14, Niš
    18000, Serbia
    不详
    18000, Serbia
    Jpn. J. Appl. Phys., 6
  • [35] Annealing influence on recovery of electrically stressed power vertical double-diffused metal oxide semiconductor transistors
    Djoric-Veljkovic, Snezana
    Manic, Ivica
    Davidovic, Vojkan
    Dankovic, Danijel
    Golubovic, Snezana
    Stojadinovic, Ninoslav
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (06)
  • [36] DOUBLE DIFFUSED HIGH-SPEED GERMANIUM TRANSISTORS
    GANSAUGE, P
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (10) : 728 - &
  • [37] FABRICATION AND CHARACTERIZATION OF DOUBLE-DIFFUSED WAVE-GUIDES
    AGAPIOU, GS
    VERBER, CM
    OPTICAL AND QUANTUM ELECTRONICS, 1995, 27 (01) : 43 - 48
  • [38] DOUBLE-DIFFUSED MOS TRANSISTOR ACHIEVES MICROWAVE GAIN
    CAUGE, TP
    KOCSIS, J
    SIGG, HJ
    VENDELIN, GD
    ELECTRONICS, 1971, 44 (04): : 99 - &
  • [39] Modeling of γ-irradiation and lowered temperature effects in power vertical double-diffused metal-oxide-semiconductor transistors
    Golubovic, S
    Djoric-Veljkovic, S
    Davidovic, V
    Stojadinovic, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (08): : 4699 - 4702
  • [40] Modeling of γ-irradiation and lowered temperature effects in power vertical double-diffused metal oxide-semiconductor transistors
    Univ of Nis Beogradska, Nis, Yugoslavia
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 8 (4699-4702):
12345