THRESHOLD CURRENT-DENSITY OF STRAINED INGAAS INGAASP QUANTUM-WELL LASERS LATTICE-MATCHED TO GAAS

被引：5
|
作者：
PARK, SH
JEONG, WG
CHOE, BD
机构：
[1] SUNGKYUNKWAN UNIV,DEPT MAT ENGN,JANGAN KU,SUWON 440746,SOUTH KOREA
[2] SEOUL NATL UNIV,DEPT PHYS,KWANAK KU,SEOUL 151742,SOUTH KOREA
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 21期
关键词：
D O I：
10.1063/1.111448
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The theoretical study on the threshold current density (J(th)) of InxGa1-xAs/InGaAsP quantum well (QW) lasers lattice matched to GaAs is presented. The results are also compared with those of InxGa1-xAs/GaAs QW lasers. For relatively long cavity length (>1000 mum), two lasers have similar values of the J(th) for x<0.25, in particular, for the wavelength of 0.98 mum. On the other hand, for x>0.25, InGaAs/InGaAsP lasers show lower values of the J(th) than InGaAs/GaAs lasers for all cavity lengths. The results indicate that InGaAs/InGaAsP lasers are expected as a promising light source for optoelectronic applications.
引用
收藏
页码：2855 / 2857
页数：3
相关论文
共 50 条
  • [31] DEPENDENCE OF THRESHOLD CURRENT-DENSITY ON QUANTUM WELL COMPOSITION FOR STRAINED-LAYER INGAAS-GAAS LASERS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    BEERNINK, KJ
    YORK, PK
    COLEMAN, JJ
    APPLIED PHYSICS LETTERS, 1989, 55 (25) : 2585 - 2587
  • [32] STRAINED INGAAS/INP QUANTUM-WELL LASERS
    TEMKIN, H
    TANBUNEK, T
    LOGAN, RA
    APPLIED PHYSICS LETTERS, 1990, 56 (13) : 1210 - 1212
  • [33] ULTRALOW THRESHOLD STRAINED INGAAS-GAAS QUANTUM-WELL LASERS BY IMPURITY-INDUCED DISORDERING
    ZOU, WX
    MERZ, JL
    FU, RJ
    HONG, CS
    ELECTRONICS LETTERS, 1991, 27 (14) : 1241 - 1243
  • [34] EXCELLENT UNIFORMITY AND VERY LOW (LESS-THAN-50 A/CM2) THRESHOLD CURRENT-DENSITY STRAINED INGAAS QUANTUM-WELL DIODE-LASERS ON GAAS SUBSTRATE
    CHAND, N
    BECKER, EE
    VANDERZIEL, JP
    CHU, SNG
    DUTTA, NK
    APPLIED PHYSICS LETTERS, 1991, 58 (16) : 1704 - 1706
  • [35] SPONTANEOUS RECOMBINATION CURRENT IN INGAAS GAAS QUANTUM-WELL LASERS
    BLOOD, P
    FLETCHER, ED
    WOODBRIDGE, K
    VENING, M
    APPLIED PHYSICS LETTERS, 1990, 57 (15) : 1482 - 1484
  • [36] Analysis of optical gain and threshold current density of 980 nm InGaAs/GaAs compressively strained quantum well lasers
    Gao, CH
    Ong, HY
    Fan, WJ
    Yoon, SF
    COMPUTATIONAL MATERIALS SCIENCE, 2004, 30 (3-4) : 296 - 302
  • [37] MICROAMPERE THRESHOLD CURRENT OPERATION OF GAAS AND STRAINED INGAAS QUANTUM-WELL LASERS AT LOW-TEMPERATURES (5-K)
    ENG, LE
    SAAR, A
    CHEN, TR
    GRAVE, I
    KUZE, N
    YARIV, A
    APPLIED PHYSICS LETTERS, 1991, 58 (24) : 2752 - 2754
  • [38] ANALYSIS OF THRESHOLD CURRENT-DENSITY OF CDZNSE/ZNSSE STRAINED WELL LASERS
    KURAMOTO, M
    CHONG, TC
    KIKUCHI, A
    KISHINO, K
    ELECTRONICS LETTERS, 1993, 29 (14) : 1260 - 1262
  • [39] Highly strained 1.24-μm InGaAs/GaAs quantum-well lasers
    Sung, LW
    Lin, HH
    APPLIED PHYSICS LETTERS, 2003, 83 (06) : 1107 - 1109
  • [40] Experimental study of the α-factor in InGaAs/AlGaAs/GaAs strained quantum-well lasers
    Bogatov, AP
    Boltaseva, AE
    Drakin, AE
    Belkin, MA
    Konyaev, VP
    QUANTUM ELECTRONICS, 2000, 30 (04) : 315 - 320
12345