THRESHOLD CURRENT-DENSITY OF STRAINED INGAAS INGAASP QUANTUM-WELL LASERS LATTICE-MATCHED TO GAAS

被引：5
|
作者：
PARK, SH
JEONG, WG
CHOE, BD
机构：
[1] SUNGKYUNKWAN UNIV,DEPT MAT ENGN,JANGAN KU,SUWON 440746,SOUTH KOREA
[2] SEOUL NATL UNIV,DEPT PHYS,KWANAK KU,SEOUL 151742,SOUTH KOREA
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 21期
关键词：
D O I：
10.1063/1.111448
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The theoretical study on the threshold current density (J(th)) of InxGa1-xAs/InGaAsP quantum well (QW) lasers lattice matched to GaAs is presented. The results are also compared with those of InxGa1-xAs/GaAs QW lasers. For relatively long cavity length (>1000 mum), two lasers have similar values of the J(th) for x<0.25, in particular, for the wavelength of 0.98 mum. On the other hand, for x>0.25, InGaAs/InGaAsP lasers show lower values of the J(th) than InGaAs/GaAs lasers for all cavity lengths. The results indicate that InGaAs/InGaAsP lasers are expected as a promising light source for optoelectronic applications.
引用
收藏
页码：2855 / 2857
页数：3
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