TEMPERATURE DEPENDENCE OF AVALANCHE BREAKDOWN VOLTAGE IN P-N-JUNCTIONS

被引：22

|

作者：

MARS, P

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1972年 / 32卷 / 01期

关键词：

D O I：

10.1080/00207217208938266

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：23 / &

相关论文

共 50 条

[31] DRIFT OF BREAKDOWN VOLTAGE IN P-N-JUNCTIONS IN SILICON (WALK-OUT)
VERWEY, JF
HERINGA, A
DEWERDT, R
HOFSTAD, WVD
SOLID-STATE ELECTRONICS, 1977, 20 (08) : 689 - 695
[32] BREAKDOWN WALKOUT IN PLANAR P-N-JUNCTIONS
SARASWAT, KC
MEINDL, JD
SOLID-STATE ELECTRONICS, 1978, 21 (06) : 813 - 819
[33] AVALANCHE MULTIPLICATION IN DIFFUSED P-N-JUNCTIONS IN INSB
GAVRUSHKO, VV
KOSOGOV, OV
LEBEDEVA, VD
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (12): : 1398 - 1400
[34] MICROPLASMA SWITCHING AND NEGATIVE-RESISTANCE IN AVALANCHE BREAKDOWN REGION OF SILICON P-N-JUNCTIONS
TYAGI, MS
INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1974, 12 (01) : 1 - 6
[35] ULTRAHIGH VOLTAGE SILICON P-N-JUNCTIONS WITH A BREAKDOWN VOLTAGE ABOVE 20KV
ASTROVA, EV
VOLLE, VM
VORONKOV, VB
GREKHOV, IV
KOZLOV, VA
LEBEDEV, AA
SOLID-STATE ELECTRONICS, 1989, 32 (10) : 851 - 852
[36] THE EFFECT OF PHOTOGENERATED CARRIERS ON THE MEAN TIME-DELAY FOR AVALANCHE BREAKDOWN IN P-N-JUNCTIONS
MCGRUER, N
REINHARD, DK
SOLID-STATE ELECTRONICS, 1980, 23 (03) : 289 - 291
[37] INFLUENCE OF INTERCONNECTIONS ONTO THE BREAKDOWN VOLTAGE OF PLANAR HIGH-VOLTAGE P-N-JUNCTIONS
FALCK, E
GERLACH, W
KOREC, J
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (02) : 439 - 447
[38] DC CHARACTERISTICS OF SILICON P-N-JUNCTIONS AT AVALANCHE BREAKDOWN INCLUDING SELF-HEATING
STEPOWICZ, WJ
SOLID-STATE ELECTRONICS, 1979, 22 (01) : 7 - 13
[39] Avalanche breakdown of high-voltage p-n junctions of SIC
Pelaz, L
Orantes, JL
Vicente, J
Bailon, L
Barbolla, J
MICROELECTRONICS JOURNAL, 1996, 27 (01) : 43 - 51
[40] AVALANCHE BREAKDOWN IN P-N JUNCTIONS
SUNOHARA, Y
REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1969, 17 (1-2): : 133 - &

← 1 2 3 4 5 →