EXPLOIT VMOS FETS ADVANTAGES TO DRIVE BIPOLAR POWER TRANSISTORS

被引：0

作者：

BARLAGE, FM

机构：

来源：

EDN MAGAZINE-ELECTRICAL DESIGN NEWS | 1978年 / 23卷 / 20期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：93 / &

共 50 条

[21] LOOK OUT, POWER TRANSISTORS - HERE COME POWER FETS
GILDER, JH
ELECTRONIC DESIGN, 1977, 25 (22) : 30 - &
[22] SMART DRIVE OF POWER TRANSISTORS
SIMAS, MIC
PIEDADE, MS
CONFERENCE RECORD OF THE 1989 IEEE INDUSTRY APPLICATIONS SOCIETY ANNUAL MEETING, PTS 1-2, 1989, : 810 - 818
[23] THE CASE FOR BIPOLAR POWER TRANSISTORS
ROEHR, B
ELECTRONIC PRODUCTS MAGAZINE, 1984, 27 (03): : 62 - 68
[24] The future of bipolar power transistors
Huang, AQ
Zhang, B
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (11) : 2535 - 2543
[25] BIPOLAR AND MOSFET POWER TRANSISTORS
YATES, W
ELECTRONIC PRODUCTS MAGAZINE, 1981, 24 (07): : 49 - 53
[26] MODELING THE DC CHARACTERISTICS OF VMOS POWER TRANSISTORS FOR COMPUTER-AIDED-DESIGN
ABUELMAATTI, MT
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1986, 133 (04): : 161 - 162
[27] EFFICIENT ULTRASONIC POWER-AMPLIFIER USES VMOS FET TO DRIVE TRANSDUCERS
KIEFER, R
ELECTRONIC DESIGN, 1981, 29 (13) : 176 - &
[28] A COMPARISON OF POWER MOS AND BIPOLAR POWER TRANSISTORS
CAIN, S
AMBROSE, R
ELECTRONICS & WIRELESS WORLD, 1987, 93 (1615): : 499 - 500
[29] DC drive system with the insulated gate bipolar transistors
Morar, Alexandru
2006 IEEE-TTTC International Conference on Automation, Quality and Testing, Robotics, Vol 1, Proceedings, 2006, : 265 - 270
[30] Cryogenic operation of power bipolar transistors
Singh, R
Baliga, BJ
SOLID-STATE ELECTRONICS, 1996, 39 (01) : 101 - 108