EXPLOIT VMOS FETS ADVANTAGES TO DRIVE BIPOLAR POWER TRANSISTORS

被引：0

作者：

BARLAGE, FM

机构：

来源：

EDN MAGAZINE-ELECTRICAL DESIGN NEWS | 1978年 / 23卷 / 20期

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暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：93 / &

共 50 条

[1] EXPLOIT VMOS FETs' ADVANTAGES TO DRIVE BIPOLAR POWER TRANSISTORS.
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