(115)BI2SR2CUOX EPITAXIAL-FILMS ON (110)SRTIO3 BY SOLID-PHASE EPITAXY

被引：1
|
作者：
NAGAI, S
FUJIMURA, N
TANAKA, H
ITO, T
机构：
[1] College of Engineering, University of Osaka Prefecture, Sakai, Osaka, 593
来源：
JOURNAL OF CRYSTAL GROWTH | 1994年 / 140卷 / 1-2期
关键词：
D O I：
10.1016/0022-0248(94)90497-9
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Films of (115) oriented Bi2Sr2CuOx on (110)SrTiO3 substrates were obtained by depositing under selected sputtering conditions and subsequently annealing. Films have been deposited on on-axis and off-oriented (110)SrTiO3 substrates and heated at 820-degrees-C to promote solid phase epitaxy. Using on-axis substrates, films have a double domain structure with (115) of the film parallel to (110) of the substrate. Using off-oriented substrates, virtually single domain (115) epitaxial films composed of grains with (115) inclined 0.8-degrees and 3.8-degrees from (110) of the substrate are obtained. Growth of (115)Bi2Sr2CuOx on (110)SrTiO3 with a large orientation distribution is attributed to the large anisotropy in lattice mismatch at the film/substrate interface during the stress relaxation.
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页码：65 / 71
页数：7
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