ABRUPTNESS OF INGAAS/INP HETEROINTERFACE GROWN BY LIQUID-PHASE EPITAXY

被引:2
|
作者
KUBO, M
SASAI, Y
YOSHIOKA, Y
OGURA, M
机构
关键词
D O I
10.1016/S0022-0248(87)80002-7
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:584 / 588
页数:5
相关论文
共 50 条
  • [31] GROWTH AND DOPING OF INGAASP/INP BY LIQUID-PHASE EPITAXY
    FIEDLER, F
    WEHMANN, HH
    SCHLACHETZKI, A
    [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 74 (01) : 27 - 38
  • [32] REDISTRIBUTION OF FE IN INP DURING LIQUID-PHASE EPITAXY
    HOLMES, DE
    WILSON, RG
    YU, PW
    [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3396 - 3399
  • [33] EPITAXIAL LATERAL OVERGROWTH OF INP BY LIQUID-PHASE EPITAXY
    NARITSUKA, S
    NISHINAGA, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 1995, 146 (1-4) : 314 - 318
  • [34] INP SUBSTRATE PROTECTION AND CLEANING IN LIQUID-PHASE EPITAXY
    FORNUTO, G
    PAPUZZA, C
    [J]. MATERIALS CHEMISTRY AND PHYSICS, 1987, 16 (01) : 45 - 52
  • [35] SHORT-RANGE-ORDER STRUCTURE OF AN INGAAS COMPOUND SEMICONDUCTOR GROWN BY LIQUID-PHASE EPITAXY
    WORONICK, SC
    CANOVA, E
    KAO, YH
    HILLS, ME
    NEE, TW
    REHN, V
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) : 2836 - 2839
  • [36] GROWTH BY HIGH-TEMPERATURE LIQUID-PHASE EPITAXY OF INGAASP/INGAAS/INP HETEROSTRUCTURE ON PHOTODETECTING DEPOSITS
    SALSAC, P
    VISSEAUX, J
    BLANJOT, C
    DECOR, P
    RIPOCHE, G
    [J]. VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1986, 41 (231): : 243 - 244
  • [37] 2-DIMENSIONAL ELECTRON-GAS IN INGAAS/INP HETEROSTRUCTURES PREPARED BY LIQUID-PHASE EPITAXY
    ALFEROV, ZI
    GORELENOK, AT
    KAMANIN, AV
    MAMUTIN, VV
    POLYANSKAYA, TA
    SAVELEV, IG
    SAIDASHEV, II
    SHMARTSEV, YV
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (07): : 768 - 769
  • [38] INFLUENCE OF GROWTH-CONDITIONS ON PROPERTIES OF INP HOMOEPITAXIAL LAYERS GROWN BY LIQUID-PHASE EPITAXY
    STOJANOFF, V
    SHAHID, MA
    MCDEVITT, TL
    MAHAJAN, S
    SCHLESINGER, TE
    BONNER, WA
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1989, 3 (03): : 279 - 285
  • [39] INGAASP/INP DISTRIBUTED FEEDBACK LASER WAFERS GROWN BY AN INTERRUPTED LIQUID-PHASE EPITAXY TECHNIQUE
    KNIGHT, DG
    BENYON, W
    [J]. JOURNAL OF CRYSTAL GROWTH, 1988, 92 (3-4) : 659 - 662
  • [40] HIGH-RESISTIVITY INP LAYER GROWN BY LOW-TEMPERATURE LIQUID-PHASE EPITAXY
    OHTSUKA, K
    OHISHI, T
    ABE, Y
    SUGIMOTO, H
    MATSUI, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 1990, 106 (2-3) : 467 - 470