EPITAXIAL CEO2 FILMS AS BUFFER LAYERS FOR HIGH-TEMPERATURE SUPERCONDUCTING THIN-FILMS

被引：189
|
作者：
WU, XD
DYE, RC
MUENCHAUSEN, RE
FOLTYN, SR
MALEY, M
ROLLETT, AD
GARCIA, AR
NOGAR, NS
机构：
[1] Exploratory Research and Development Center, Los Alamos National Laboratory, Los Alamos
来源：
APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 19期
关键词：
D O I：
10.1063/1.104994
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have prepared epitaxial (100)CeO2 thin films on LaAlO3, sapphire, and yttria-stabilized zirconia using pulsed laser deposition. It is demonstrated in this letter that the CeO2 films are chemically and structurally compatible to the high-temperature superconductor YBa2Cu3O7-delta (YBCO). Epitaxial YBCO films on CeO2/LaAlO3 had a zero resistance temperature and critical current density in a zero field of 90 K and 5.9 X 10(6) A/cm2 at 75 K, respectively. Furthermore, epitaxial multilayers of CeO2/YBCO were prepared. This work demonstrated that CeO2 is an excellent buffer layer material for the high-temperature superconductors.
引用
收藏
页码：2165 / 2167
页数：3
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