MOVPE GROWTH AND CHARACTERIZATION OF CDTE ON CDS SINGLE-CRYSTAL SUBSTRATES

被引：5
|
作者：
SIMMONS, MY
BROWN, PD
DUROSE, K
机构：
[1] Applied Physics Group, School of Engineering and Applied Science, University of Durham, Durham, DH1 3LE, South Road
来源：
JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(91)90538-G
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Thin films of CdTe have been deposited by MOVPE at 325-degrees-C onto the opposite polar faces of {0001} and {011BAR6} oriented CdS single crystal substrates. RHEED studies showed that best epitaxy was obtained on the non-metal surfaces, and that the {111}CdTe parallel-to {0001BAR}CdS and {375BAR}CdTe parallel-to {011BAR6BAR}CdS epitaxial relationships were established. Thin lamellar twins lying parallel to the epilayer/substrate interface were observed in the former, while there was no evidence for twinning in the latter.
引用
收藏
页码：664 / 669
页数：6
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