EFFECTS OF HYDROGENATION ON THE ELECTRICAL CHARACTERISTICS OF NI/N-SI(111) SCHOTTKY DIODES

被引：4
|
作者：
SAHAY, PP [1 ]
SHAMSUDDIN, M [1 ]
SRIVASTAVA, RS [1 ]
机构：
[1] BANARAS HINDU UNIV,INST TECHNOL,DEPT MET ENGN,VARANASI 221005,UTTAR PRADESH,INDIA
来源：
SOLID-STATE ELECTRONICS | 1991年 / 34卷 / 07期
关键词：
D O I：
10.1016/0038-1101(91)90009-N
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Hydrogenation effects on the electrical characteristics of Ni/n-Si(111) Schottky diodes have been reported from (I-V) and (C-V) studies. It has been concluded that hydrogen lowers the work function of nickel and also generates interfacial traps at the Si-SiO2 interface. Slight passivation of deep donor states responding to the lower frequency test signal has also been observed after hydrogenating the diode.
引用
收藏
页码：727 / 729
页数：3
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