XPS STUDIES OF CONTAMINATION OF REACTOR AND SILICON SURFACES CAUSED BY REACTIVE ION ETCHING

被引:4
|
作者
ERMOLIEFF, A
AMOUROUX, A
MARTHON, S
DAVIET, JF
PECCOUD, L
机构
[1] Div. LETI/DOP, CEA/DTA, Grenoble
关键词
D O I
10.1088/0268-1242/6/4/011
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
X-ray photoelectron spectroscopy measurements have been carried out to determine the contamination of reactor walls and of different SiO2/Si wafers after the reactive ion etching processes. Different cleaning processes have also been assessed by this method. The Al(2p) or Si(2p), C(1s), O(1s) and F(1s) photoelectron lines were monitored and concentrations determined by integration of these lines. F(1s) and C(1s) were decomposed into several components corresponding to different chemical bonds. The results show that contamination of the reactor walls by fluoropolymers is due to the presence of Si or the photoresist; there is no polymer formation with an Al cathode coating. The polymers are cleaned by O2 plasma and the residual fluorine forms a passive layer with the Al of the reactor walls. During the plasma etching of a SiO2 film, there is formation of C-Si, C-C, O-Si-F, F-Si bonds, but it is only when the oxygen has disappeared that CF(x) bonds are formed. These polymer layers stop the etching process on silicon. They are cleaned by an O2 or NF3 plasma, but the latter removes the polymers without increasing the oxygen, fluorine or nitrogen contamination and appears to be the most appropriate for improving the surface quality of silicon after fluorocarbon plasma etching.
引用
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页码:290 / 295
页数:6
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