RAPID LIQUID-PHASE EPITAXIAL-GROWTH STUDIES

A new method of steady state liquid phase epitaxial (LPE) growth of III-V semiconductors is currently under development at Brown University. The method utilizes a saturated solution under controlled Poiseuille flow to replenish continuously the solute depletion layer at the substrate-solution interface. This results in time-independent growth rates which are up to a factor of 100 higher than those in conventional LPE methods. Such high growth rates have potential applications in the volume production of high efficiency solar cells. Mathematical models of the fluid, thermal and mass transport aspects of the growth process have been developed and are presented. Experimental results on GaAs LPE layers to date are discussed. Only abstract is given.